Recent Progress and Applications of HfO<sub>2</sub>-Based Ferroelectric Memory
نویسندگان
چکیده
The discovery of ferroelectricity in hafnium oxide (HfO 2 ) based thin films 2011 renewed the interest ferroelectrics. These new ferroelectrics possess completely different crystal morphology with conventional perovskite ferroelectrics, and present more robust ferroelectric properties upon aggressive scaling compatibility standard integrated circuit fabrication processes. In this article, we give a brief introduction to memories, then review basic properties, recent progress, memory applications these HfO -based
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ژورنال
عنوان ژورنال: Tsinghua Science & Technology
سال: 2023
ISSN: ['1878-7606', '1007-0214']
DOI: https://doi.org/10.26599/tst.2021.9010096